Self-adaptive read voltage adjustment using boundary error statistics for memories with time-varying error rates

ABSTRACT

A processing device in a memory system identifies a first range of a plurality of write-to-read delay ranges for the memory component, wherein the first range represents a plurality of write-to-read delay times and has an associated read voltage level used to perform a read operation on a segment of the memory component having a write-to-read delay time that falls within the first range. The processing device further identifies a first set of the plurality of write-to-read delay times at a first end of the first range and a second set of the plurality of write-to-read delay times at a second end of the first range, and determines a first error rate for the memory component corresponding to the first set of the plurality of write-to-read delay times and a second error rate for the memory component corresponding to the second set of the plurality of write-to-read delay times. The processing device determines whether a correspondence between the first error rate and the second error rate satisfies a first threshold criterion, and, responsive to the correspondence between the first error rate and the second error rate not satisfying the first threshold criterion, modifies the read voltage level associated with the first range.

TECHNICAL FIELD

Embodiments of the disclosure relate generally to memory sub-systems,and more specifically, relate to self-adaptive read voltage adjustmentusing boundary error statistics for memories with time-varying errorrates.

BACKGROUND

A memory sub-system can be a storage system, a memory module, or ahybrid of a storage device and memory module. The memory sub-system caninclude one or more memory components that store data. The memorycomponents can be, for example, non-volatile memory components andvolatile memory components. In general, a host system can utilize amemory sub-system to store data at the memory components and to retrievedata from the memory components.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure will be understood more fully from the detaileddescription given below and from the accompanying drawings of variousembodiments of the disclosure.

FIG. 1 illustrates an example computing environment that includes amemory sub-system in accordance with some embodiments of the presentdisclosure.

FIG. 2 is a flow diagram of an example method of adjusting a readvoltage level based on accumulated boundary RBER statistics for memorieswith time-varying error rates in accordance with some embodiments of thepresent disclosure.

FIG. 3A is a graph that illustrates the bit error rate as a function ofwrite-to-read delay for three read voltage levels in accordance withsome embodiments of the present disclosure.

FIG. 3B is a graph that illustrates the accumulated boundary raw biterror rate statistics for memories with time-varying error rates inaccordance with some embodiments of the present disclosure.

FIG. 4 is a flow diagram of an example method of determining an errorrate for a set of write-to-read delay times at a boundary of a range ofwrite-to-read delay times in accordance with some embodiments of thepresent disclosure.

FIG. 5 is a flow diagram of an example method of performing a readoperation using a dynamically adjusted read voltage level based onboundary error statistics in accordance with some embodiments of thepresent disclosure.

FIG. 6 is a flow diagram of an example method of adjusting a readvoltage level based on accumulated directional RBER statistics formemories with time-varying error rates in accordance with someembodiments of the present disclosure.

FIG. 7 is a graph that illustrates the accumulated directional raw biterror rate statistics for memories with time-varying error rates inaccordance with some embodiments of the present disclosure.

FIG. 8 is a flow diagram of an example method of determining adirectional error rate for a set of write-to-read delay times of a rangeof write-to-read delay times in accordance with some embodiments of thepresent disclosure.

FIG. 9 is a flow diagram of an example method of performing a readoperation using a dynamically adjusted read voltage level based ondirectional error statistics in accordance with some embodiments of thepresent disclosure.

FIG. 10 is a block diagram of an example computer system in whichembodiments of the present disclosure may operate.

DETAILED DESCRIPTION

Aspects of the present disclosure are directed to self-adaptive readvoltage adjustment for memories in a memory sub-system with time-varyingerror rates. A memory sub-system can be a storage device, a memorymodule, or a hybrid of a storage device and memory module. Examples ofstorage devices and memory modules are described below in conjunctionwith FIG. 1. In general, a host system can utilize a memory sub-systemthat includes one or more memory components. The host system can providedata to be stored at the memory sub-system and can request data to beretrieved from the memory sub-system.

A memory sub-system can include multiple memory components that canstore data from the host system. Depending on the implementation, eachmemory component can include either the same or a different type ofmedia. Examples of media include, but are not limited to, a cross-pointarray of non-volatile memory and flash based memory such as single-levelcell (SLC) memory, multi-level cell (MLC) memory, triple-level cell(TLC) memory, or quad-level cell (QLC) memory. The characteristics ofdifferent types of media can vary from one media type to another. Oneexample of a characteristic associated with a memory component is datadensity. Data density corresponds to an amount of data (e.g., bits ofdata) that can be stored in each memory cell of a memory component.Using the example of a flash based memory, QLC memory can store fourbits of data while SLC memory can store one bit of data. Accordingly, amemory component including QLC memory cells will have a higher datadensity than a memory component including SLC memory cells. Anotherexample of a characteristic of a memory component is access speed. Theaccess speed corresponds to an amount of time for the memory componentto access data stored at the memory component.

Other characteristics of a memory component can be associated with theendurance of the memory component to store data. When data is written toand/or erased from a memory cell of a memory component, the memory cellcan be damaged to some extent. As the number of write operations and/orerase operations performed on a memory cell increases, the probabilityof the data stored at the memory cell including an error increases, andthe memory cell is increasingly damaged. A characteristic associatedwith the endurance of the memory component is the number of writeoperations or a number of program/erase operations performed on a memorycell of the memory component. An increasing number of read and writeoperations can result in a higher error rate of the data stored at thememory cell. This can increase the use of error recovery operations,which includes but not is limited to read retry (i.e. sensing the memorycomponent again) and RAID (redundant array of independent disks) forsubsequent data operations (e.g., read and/or write) performed on thememory cell. The increased use of the error recovery operations canresult in a reduction of the performance of a conventional memorysub-system. In addition, as the error rate for a memory cell or datablock continues to increase, it may even surpass the error recoverycapabilities of the memory sub-system, leading to an irreparable loss ofthe data. Furthermore, as more resources of the memory sub-system areused to perform the error recovery operations, fewer resources areavailable to perform other read operations or write operations.

Therefore, upon a threshold number of read and/or write operations beingperformed on the data block, the memory sub-system can perform a dataintegrity check (also referred to herein as a “scan”) to verify that thedata stored at the data block remain at an adequate reliability level.During the data integrity check, a collection of read and/or writeoperations is invoked and one or more reliability statistics aredetermined for data stored at the data block. One example of areliability statistic is a raw bit error rate (RBER). The RBER can bedefined as the ratio of the number of erroneous bits to the number ofall data bits stored in the data block.

For certain memory types (i.e., for memory sub-systems employing certaintypes of storage media), the error rate can vary over time. Inparticular, some non-volatile memories (e.g., NAND, phase change, etc.)have threshold voltage (Vt) distributions that move as a function oftime. At a given read level (i.e., the voltage applied to a memory cellas part of a read operation), if the Vt distributions move, then theRBER can also be affected. For any Vt distribution at an instance intime, there can be an optimal read level (or read level range) thatminimizes the expected RBER. In particular, the Vt distribution and RBERcan be a function of write-to-read (W2R) delay (i.e., the period of timethat passes between when data is written to a memory component and whenthe data is read from the memory component). Due to this time-varyingnature of RBER, as well as other noise mechanisms in memory, a singleread level may not be sufficient to achieve an error rate that satisfiescertain system reliability targets. Thus, certain memory sub-systems mayhave a number of pre-programmed read voltage levels, each correspondingto a different range of W2R delay times. For example, a first readvoltage level may be used to read data having a W2R delay time thatfalls within a first corresponding range, while a second read voltagelevel may be used to read data having a W2R delay time that falls withina second corresponding range, and so on.

In many conventional memory sub-systems, the read voltage levelsutilized for each range of W2R delay times are pre-programmed and neveradjusted during usage of the underlying memory components. Thesepre-programmed read voltage levels may not be set at optimal valuesduring production or may not remain optimal over the life of the memorycomponent, leading to increased error rates. For example, Vtdistributions can be constantly affected by disturbances of self orneighboring cells, circuitry noise, temperature, etc., which impliesoptimal read voltages should also change accordingly. It is alsopossible that the optimal read voltages can gradually shift over timedue to wear on the memory cells and changes to the physical and/orelectrical characteristics of the memory cells. The use of sub-optimalread voltage levels can lead to partial write effects, increased RBER,and a high read-retry trigger rate. This can result in a decrease ofperformance of the memory sub-system, as well as an increase in thepower consumption of the memory sub-system. System bandwidth and otherresources can also be tied up for extended periods of time, preventingthe use of those resources for other functionality.

Aspects of the present disclosure address the above and otherdeficiencies by utilizing a self-adaptive on-the-fly read voltageadjustment scheme based on accumulated boundary RBER statistics formemories with time-varying error rates. In one implementation, thememory sub-system identifies a first range of multiple write-to-readdelay ranges for a memory component, wherein the first range representsa plurality of write-to-read delay times and has an associated readvoltage level used to perform a read operation on a segment of thememory component having a write-to-read delay time that falls within thefirst range. The memory sub-system further identifies a first set of theplurality of write-to-read delay times at a first end of the first range(i.e., at a first boundary) and a second set of the plurality ofwrite-to-read delay times at a second end of the first range (i.e., at asecond boundary) and determines a first error rate for the memorycomponent corresponding to the first set of write-to-read delay timesand a second error rate for the memory component corresponding to thesecond set of write-to-read delay times. The memory sub-systemdetermines whether a correspondence between the first error rate and thesecond error rate (e.g., a ratio of the first error rate to the seconderror rate, a difference between the first error rate and the seconderror rate, etc.) satisfies a first threshold criterion, which forexample, can be based on desired reliability and performancecharacteristics of the memory sub-system. If the correspondence betweenthe first error rate and the second error rate satisfies the firstthreshold criterion, the memory sub-system can maintain the read voltagelevel at a current level. Alternatively, responsive to thecorrespondence between the first error rate and the second error ratenot satisfying the first threshold criterion, the memory sub-system canmodify the read voltage level associated with the first range as needed.

The read voltage adjustment scheme described herein allows foradjustment of production trim values that may have been originally setsub-optimally or may have become sub-optimal over time. Adjusting theread voltage levels used for different ranges of W2R delay times canminimize the harmful effects of various disturbances on the memorycomponent and reduce the read-retry trigger rate, thereby improvingthroughput and latency in the memory sub-system. In addition, readvoltage adjustment can diminish the partial write effect and lower therisk of the memory sub-system being unable to meet reliability targetsof the host system. Finally reducing the RBER can increase performance,decrease power consumption associated with error correction/recoveryoperations and free system resources for other functionality. The memorycontroller can be utilized for less time for performing error recoveryoperations, thereby allowing more time for the controller to handleother data access operations for the memory component.

FIG. 1 illustrates an example computing environment 100 that includes amemory sub-system 110 in accordance with some embodiments of the presentdisclosure. The memory sub-system 110 can include media, such as memorycomponents 112A to 112N. The memory components 112A to 112N can bevolatile memory components, non-volatile memory components, or acombination of such. A memory sub-system 110 can be a storage device, amemory module, or a hybrid of a storage device and memory module.Examples of a storage device include a solid-state drive (SSD), a flashdrive, a universal serial bus (USB) flash drive, an embedded Multi-MediaController (eMMC) drive, a Universal Flash Storage (UFS) drive, and ahard disk drive (HDD). Examples of memory modules include a dual in-linememory module (DIMM), a small outline DIMM (SO-DIMM), and a non-volatiledual in-line memory module (NVDIMM).

The computing environment 100 can include a host system 120 that iscoupled to one or more memory sub-systems 110. In some embodiments, thehost system 120 is coupled to different types of memory sub-system 110.FIG. 1 illustrates one example of a host system 120 coupled to onememory sub-system 110. The host system 120 uses the memory sub-system110, for example, to write data to the memory sub-system 110 and readdata from the memory sub-system 110. As used herein, “coupled to”generally refers to a connection between components, which can be anindirect communicative connection or direct communicative connection(e.g., without intervening components), whether wired or wireless,including connections such as electrical, optical, magnetic, etc.

The host system 120 can be a computing device such as a desktopcomputer, laptop computer, network server, mobile device, embeddedcomputer (e.g., one included in a vehicle, industrial equipment, or anetworked commercial device), or such computing device that includes amemory and a processing device. The host system 120 can include or becoupled to the memory sub-system 110 so that the host system 120 canread data from or write data to the memory sub-system 110. The hostsystem 120 can be coupled to the memory sub-system 110 via a physicalhost interface. As used herein, “coupled to” generally refers to aconnection between components, which can be an indirect communicativeconnection or direct communicative connection (e.g., without interveningcomponents), whether wired or wireless, including connections such aselectrical, optical, magnetic, etc. Examples of a physical hostinterface include, but are not limited to, a serial advanced technologyattachment (SATA) interface, a peripheral component interconnect express(PCIe) interface, universal serial bus (USB) interface, Fibre Channel,Serial Attached SCSI (SAS), etc. The physical host interface can be usedto transmit data between the host system 120 and the memory sub-system110. The host system 120 can further utilize an NVM Express (NVMe)interface to access the memory components 112A to 112N when the memorysub-system 110 is coupled with the host system 120 by the PCIeinterface. The physical host interface can provide an interface forpassing control, address, data, and other signals between the memorysub-system 110 and the host system 120.

The memory components 112A to 112N can include any combination of thedifferent types of non-volatile memory components and/or volatile memorycomponents. An example of non-volatile memory components includes anegative-and (NAND) type flash memory. Each of the memory components112A to 112N can include one or more arrays of memory cells such assingle level cells (SLCs) or multi-level cells (MLCs) (e.g., triplelevel cells (TLCs) or quad-level cells (QLCs)). In some embodiments, aparticular memory component can include both an SLC portion and a MLCportion of memory cells. Each of the memory cells can store one or morebits of data (e.g., data blocks) used by the host system 120. Althoughnon-volatile memory components such as NAND type flash memory aredescribed, the memory components 112A to 112N can be based on any othertype of memory such as a volatile memory. In some embodiments, thememory components 112A to 112N can be, but are not limited to, randomaccess memory (RAM), read-only memory (ROM), dynamic random accessmemory (DRAM), synchronous dynamic random access memory (SDRAM), phasechange memory (PCM), magneto random access memory (MRAM), negative-or(NOR) flash memory, electrically erasable programmable read-only memory(EEPROM), and a cross-point array of non-volatile memory cells. Across-point array of non-volatile memory can perform bit storage basedon a change of bulk resistance, in conjunction with a stackablecross-gridded data access array. Additionally, in contrast to manyflash-based memories, cross-point non-volatile memory can perform awrite in-place operation, where a non-volatile memory cell can beprogrammed without the non-volatile memory cell being previously erased.Furthermore, the memory cells of the memory components 112A to 112N canbe grouped as memory pages or data blocks that can refer to a unit ofthe memory component used to store data. The data blocks can be furthergrouped into one or more planes on each of memory components 112A to112N, where operations can be performed on each of the planesconcurrently. Corresponding data blocks from different planes can beassociated with one another in a stripe than spans across multipleplanes.

The memory system controller 115 (hereinafter referred to as“controller”) can communicate with the memory components 112A to 112N toperform operations such as reading data, writing data, or erasing dataat the memory components 112A to 112N and other such operations. Thecontroller 115 can include hardware such as one or more integratedcircuits and/or discrete components, a buffer memory, or a combinationthereof. The controller 115 can be a microcontroller, special purposelogic circuitry (e.g., a field programmable gate array (FPGA), anapplication specific integrated circuit (ASIC), etc.), or other suitableprocessor. The controller 115 can include a processor (processingdevice) 117 configured to execute instructions stored in local memory119. In the illustrated example, the local memory 119 of the controller115 includes an embedded memory configured to store instructions forperforming various processes, operations, logic flows, and routines thatcontrol operation of the memory sub-system 110, including handlingcommunications between the memory sub-system 110 and the host system120. In some embodiments, the local memory 119 can include memoryregisters storing memory pointers, fetched data, counters 118, etc. Thelocal memory 119 can also include read-only memory (ROM) for storingmicro-code. While the example memory sub-system 110 in FIG. 1 has beenillustrated as including the controller 115, in another embodiment ofthe present disclosure, a memory sub-system 110 may not include acontroller 115, and may instead rely upon external control (e.g.,provided by an external host, or by a processor or controller separatefrom the memory sub-system).

In general, the controller 115 can receive commands or operations fromthe host system 120 and can convert the commands or operations intoinstructions or appropriate commands to achieve the desired access tothe memory components 112A to 112N. The controller 115 can beresponsible for other operations such as wear leveling operations,garbage collection operations, error detection and error-correcting code(ECC) operations, encryption operations, caching operations, and addresstranslations between a logical block address and a physical blockaddress that are associated with the memory components 112A to 112N. Thecontroller 115 can further include host interface circuitry tocommunicate with the host system 120 via the physical host interface.The host interface circuitry can convert the commands received from thehost system into command instructions to access the memory components112A to 112N as well as convert responses associated with the memorycomponents 112A to 112N into information for the host system 120.

The memory sub-system 110 can also include additional circuitry orcomponents that are not illustrated. In some embodiments, the memorysub-system 110 can include a cache or buffer (e.g., DRAM) and addresscircuitry (e.g., a row decoder and a column decoder) that can receive anaddress from the controller 115 and decode the address to access thememory components 112A to 112N.

The memory sub-system 110 includes a read voltage adjustment component113 that can be used to perform boundary RBER calculations and adjustthe read voltage level(s) for the data blocks of memory components 112Ato 112N. In one embodiment, read voltage adjustment component 113identifies a first range of a plurality of write-to-read delay rangesfor a memory component, such as one of memory components 112A to 112N.The first range represents a plurality of write-to-read (W2R) delaytimes and has an associated read voltage level used to perform a readoperation on a segment of the memory component having a W2R delay timethat falls within the first range. Read voltage adjustment component 113can further identify a first set of the plurality of write-to-read delaytimes at a first end of the first range (i.e., at a first boundary) anda second set of the plurality of write-to-read delay times at a secondend of the first range (i.e., at a second boundary) and determine afirst error rate for the memory component corresponding to the first setof the plurality of write-to-read delay times and a second error ratefor the memory component corresponding to the second set of theplurality of write-to-read delay times. Read voltage adjustmentcomponent 113 can determine whether a correspondence between the firsterror rate and the second error rate satisfies a first thresholdcriterion, which for example, can be based on desired reliability andperformance characteristics of the memory sub-system. If thecorrespondence satisfies the first threshold criterion, read voltageadjustment component 113 can maintain the read voltage level at acurrent level. Responsive to the correspondence between the first errorrate and the second error rate not satisfying the first thresholdcriterion, however, read voltage adjustment component 113 can modify theread voltage level associated with the first range, as needed, such asto bring the correspondence (e.g., ratio) within a threshold amount of atarget ratio defined by the first threshold criterion. Further detailswith regards to the operations of the read voltage adjustment component113 are described below.

FIG. 2 is a flow diagram of an example method of adjusting a readvoltage level based on accumulated boundary RBER statistics for memorieswith time-varying error rates in accordance with some embodiments of thepresent disclosure. The method 200 can be performed by processing logicthat can include hardware (e.g., processing device, circuitry, dedicatedlogic, programmable logic, microcode, hardware of a device, integratedcircuit, etc.), software (e.g., instructions run or executed on aprocessing device), or a combination thereof. In some embodiments, themethod 200 is performed by the read voltage adjustment component 113 ofFIG. 1. Although shown in a particular sequence or order, unlessotherwise specified, the order of the processes can be modified. Thus,the illustrated embodiments should be understood only as examples, andthe illustrated processes can be performed in a different order, andsome processes can be performed in parallel. Additionally, one or moreprocesses can be omitted in various embodiments. Thus, not all processesare required in every embodiment. Other process flows are possible.

At operation 210, the processing logic identifies a first range (e.g.,W2R Range 310) of a plurality of write-to-read delay ranges for thememory component, wherein the first range represents a plurality ofwrite-to-read delay times and has an associated read voltage level(e.g., Read Level 1) used to perform a read operation on a segment ofthe memory component having a write-to-read delay time that falls withinthe first range, as shown in FIG. 3A. FIG. 3A is a graph 300 thatillustrates the bit error rate (BER) as a function of write-to-read(W2R) delay for three read voltage levels in accordance with someembodiments of the present disclosure. As described herein, Vtdistributions can shift over time. For example, for a given read voltagelevel, such as a first read voltage level (labeled Read Level 1), thebit error rate experienced when read operations are performed using thisread voltage level can change as a function of time due to the move ofVt distributions. Similarly, the corresponding bit error rates of thesecond read voltage level (labeled Read Level 2) or the third readvoltage level (labeled Read Level 3) also change as a function of time.In these or other situations, the Vt distribution and bit error rate canbe a function of the W2R delay. Graph 300 shows that each of the threeread voltage levels correspond to a different range of W2R delay times,such as W2R Range 310, W2R Range 320, and W2R Range 330, which can bedesign targets from memory sub-system specifications. In otherembodiments, there may be any other number of ranges of W2R delay timesand associated read voltage levels. In graph 300, the measured BER isdisplayed for read operations performed using a designated read voltagelevel. For example, BER curve 312 represents the BER measured for readoperations performed using Read Level 1 on segments of different W2Rdelay times, BER curve 322 represents the BER measured for readoperations performed using Read Level 2 on segments of different W2Rdelay times, and BER curve 332 represents the BER measured for readoperations performed using Read Level 3 on segments of different W2Rdelay times. It is evident from graph 300 that using Read Level 1results in a lower BER for read operations performed on segments of thememory component having W2R delay times that fall within W2R Range 310,using Read Level 2 results in a lower BER for read operations performedon segments of the memory component having W2R delay times that fallwithin W2R Range 320, and using Read Level 3 results in a lower BER forread operations performed on segments of the memory component having W2Rdelay times that fall within W2R Range 330. Graph 300 also illustratesthat for a single read level (e.g., Read Level 2) the BER increases atlower W2R delay times (i.e., W2R Range 310) and at higher W2R delaytimes (i.e., W2R Range 330). The values of Read Level 1, Read Level 2,and Read Level 3 may be set during production of the memory component,but due to the passage of time and other factors associated with use ofthe memory component, may become sub-optimal at some point. Adjustingthe read voltage levels based on accumulated boundary RBER statisticscan bring those read voltage levels back to a point where the BER isoptimized (or at least reduced) for a corresponding range of W2R delaytimes.

Referring again to FIG. 2, at operation 220, the processing logicidentifies a first set 314 of the plurality of write-to-read delay timesat a first end (i.e., boundary) of the first range (i.e., W2R Range 310)and a second set 316 of the plurality of write-to-read delay times at asecond end (i.e., boundary) of the first range, as illustrated in FIG.3B. FIG. 3B is a graph 350 that illustrates the accumulated boundaryRBER statistics for memories with time-varying error rates in accordancewith some embodiments of the present disclosure. In one implementation,the first set 314 includes a small set of the lowest W2R delay times inW2R Range 310 and the second set includes a small set of the highest W2Rdelay times in W2R Range 310. W2R Range 320 may similarly have a firstset 324 and a second set 326, and W2R Range 330 may have a first set 334and a second set 336. The size of the first set 314 and the second set316 can be a configurable parameter and can include a fixed number ofW2R delay times (e.g., the 5 lowest W2R delay times or the 5 highest W2Rdelay times in W2R Range 310) or a percentage of all the W2R delay timesin W2R Range 310 (e.g., the lowest 1% or the highest 1%). In oneimplementation, the boundary between W2R Range 310 and W2R Range 320 canbe set according to a point where curve 312 and curve 322 intersect, andthe boundary between W2R Range 320 and W2R Range 330 can be setaccording to a point where curve 322 and curve 332 intersect. Since theerror rates can change over time due to physical changes to theassociated memory cells, wear level, temperature, etc., these boundariescan also shift over time in order to optimize the BER. In addition,changing system design targets can also impact the location of theseboundaries.

Referring again to FIG. 2, at operation 230, the processing logicdetermines a first error rate for the memory component corresponding tothe first set 314 of the plurality of write-to-read delay times and asecond error rate for the memory component corresponding to the secondset 316 of the plurality of write-to-read delay times. In oneimplementation, read voltage adjustment component 113 performs a dataintegrity scan of the memory component to determine an error rate foreach segment (e.g., a data block). During the scan, read voltageadjustment component 113 identifies one or more reliability statistics,such as the raw bit error rate (RBER) defined as the ratio of the numberof erroneous bits to the number of all data bits stored in the datablock. In one embodiment, during the scan, read voltage adjustmentcomponent 113 writes and reads a raw code word (i.e., a series of afixed number of bits) from the data block, with a controlled W2R delayfalling into either the first set 314 or the second set 316. Readvoltage adjustment component 113 can apply the raw code word to an errorcorrecting code (ECC) decoder to generate a decoded code word andcompare the decoded code word to the raw code word. Read voltageadjustment component 113 can count a number of flipped bits between thedecoded code word and the raw code word, with a ratio of the number offlipped bits (i.e. erroneous) to the total number of bits in the codeword representing the RBER. Read voltage adjustment component 113 canrepeat this process for additional code words with a W2R delay uniformlydistributed over 314 and 316 until the entire block has been scanned. Inanother implementation, read voltage adjustment component 113 canutilize various counters 118 to determine the error rate, as describedin more detail with respect to FIG. 4.

At operation 240, the processing logic determines whether acorrespondence between the first error rate and the second error ratesatisfies a first threshold criterion. In one implementation, readvoltage adjustment component 113 determines a ratio of the first errorrate to the second error rate and compares that ratio to a target ratio.In one implementation, the target ratio may be one, such that it isdesirable for the first error rate to be as close as possible to thesecond error rate. Accordingly, read voltage adjustment component 113can compare the first error rate to the second error rate and determinewhether the first error rate is within a threshold amount of the seconderror rate. If the ratio is sufficiently close to one (i.e., if thedifference between the first error rate and the second error rate iswithin the threshold amount), read voltage adjustment component 113 candetermine that the threshold criterion is satisfied. In otherimplementations, the target ratio may be some other value set in view ofdesired reliability and performance requirements of the memorysub-system. For example, in some situations, it may be preferred thatone certain read level is to be optimized based on the whole W2R rangeof the memory sub-system. In another implementation, it may be desirablethat the first error rate at the first boundary of a certain W2R Rangebe lower than the second error rate at the second boundary, or viceversa. Accordingly, the target ratio may have some value other than one.If the ratio is sufficiently close to the target ratio (i.e., if theratio is within the threshold amount of the target ratio), read voltageadjustment component 113 can determine that the threshold criterion issatisfied.

Responsive to the correspondence between the first error rate and thesecond error rate satisfying the first threshold criterion, at operation250, the processing logic maintains the read voltage level associatedwith the first range at a current level. Responsive to thecorrespondence between the first error rate to the second error rate notsatisfying the first threshold criterion, at operation 260, theprocessing logic modifies the read voltage level associated with thefirst range. In one implementation, read voltage adjustment component113 can adjust the read voltage level to cause the ratio of the firsterror rate to the second error rate to satisfy the first thresholdcriterion. This can include for example, either increasing or decreasingthe read voltage level by a certain amount, re-measuring the error ratesat each boundary, and determining whether the ratio is brought closer tothe target ratio. Read voltage adjustment component 113 can repeat thisiterative process until the threshold criterion is satisfied. Once theappropriate modified read voltage level is determined, read voltageadjustment component 113 can store this read voltage level for use withfuture read operations directed to data having a W2R delay that fallswithin the corresponding range.

FIG. 4 is a flow diagram of an example method of determining an errorrate for a set of write-to-read delay times at a boundary of a range ofwrite-to-read delay times in accordance with some embodiments of thepresent disclosure. The method 400 can be performed by processing logicthat can include hardware (e.g., processing device, circuitry, dedicatedlogic, programmable logic, microcode, hardware of a device, integratedcircuit, etc.), software (e.g., instructions run or executed on aprocessing device), or a combination thereof. In some embodiments, themethod 400 is performed by the read voltage adjustment component 113 ofFIG. 1. Although shown in a particular sequence or order, unlessotherwise specified, the order of the processes can be modified. Thus,the illustrated embodiments should be understood only as examples, andthe illustrated processes can be performed in a different order, andsome processes can be performed in parallel. Additionally, one or moreprocesses can be omitted in various embodiments. Thus, not all processesare required in every embodiment. Other process flows are possible.

At operation 410, the processing logic monitors read operationsperformed on segments of the memory component having write-to-read delaytimes that fall within the first set (e.g., 314 and/or 316) of theplurality of write-to-read delay times. In one implementation, readvoltage adjustment component 113 can receive requests to perform readoperations from host system 120, perform any address mapping operationsto identify the physical address in memory to which the read operationis directed, and determine the corresponding W2R delay time for thataddress. The W2R delay time can represent a difference between a firsttime when the data was written to the physical address and a second timewhen the read request was received from the host system 120. Dependingon the implementation, the W2R delay time can be calculated based on thedifference between current time and a time stamp (indicating write time)which can be stored either with the data at the physical address on thememory component or in some other data store separate from the memorycomponent (e.g., in local memory 119), or can be otherwise calculated byread voltage adjustment component 113. In another implementation, actualread operations are not received from host system 120, but rather readvoltage adjustment component 113 can intentionally issue requests toread data known to have the appropriate W2R delay time. Although theoperations of method 400 are described with respect to a first set(e.g., 314) of W2R delay times of a first range (e.g., W2R Range 310),the same or similar operations may be performed for a different set(e.g., 316) or for a different range (e.g., W2R Range 320 or 330).

At operation 420, the processing logic increments a first counter ofcounters 118 in response to each failed bit detected in the readoperations. For reads that fall within the identified set 314, readvoltage adjustment component 113 reads a raw code word, applies the codeword to an error correcting code (ECC) decoder to generate a decodedcode word and compares the decoded code word to the raw code word. Readvoltage adjustment component 113 can increment the first counter inresponse to each bit that was flipped in the decoded code word. Atoperation 430, the processing logic increments a second counter ofcounters 118 in response to each bit in each code word that is decodedin the read operations.

At operation 440, the processing logic determines whether a value of thefirst counter satisfies a second threshold criterion pertaining to asample size. In order to ensure that the determined error rate isstatistically relevant and not merely an outlier, read voltageadjustment component 113 may continue to collect data until a thresholdnumber of failed bits have been decoded, with the threshold number offailed bits representing a sufficient sample size. Once the thresholdnumber has been reached, read voltage adjustment component 113 candetermine that the second threshold criterion has been satisfied.Responsive to the value of the first counter satisfying the secondthreshold criterion, at operation 450, the processing logic determinesthe error rate from a ratio of a value of the first counter to the valueof the second counter.

In one implementation, the operations of method 400 are performed twicein order to determine both the first and second boundary error ratesdescribed with respect to method 200. For example, the processing logicmay determine perform the operations of method 400 once to determine theerror rate corresponding to bits written at a first boundary 314 of agiven write-to-read range 310 and again to determine the error ratecorresponding to bits written at a second boundary 316 of thewrite-to-read range 310.

FIG. 5 is a flow diagram of an example method of performing a readoperation using a dynamically adjusted read voltage level based onboundary error statistics in accordance with some embodiments of thepresent disclosure. The method 500 can be performed by processing logicthat can include hardware (e.g., processing device, circuitry, dedicatedlogic, programmable logic, microcode, hardware of a device, integratedcircuit, etc.), software (e.g., instructions run or executed on aprocessing device), or a combination thereof. In some embodiments, themethod 500 is performed by the read voltage adjustment component 113 ofFIG. 1. Although shown in a particular sequence or order, unlessotherwise specified, the order of the processes can be modified. Thus,the illustrated embodiments should be understood only as examples, andthe illustrated processes can be performed in a different order, andsome processes can be performed in parallel. Additionally, one or moreprocesses can be omitted in various embodiments. Thus, not all processesare required in every embodiment. Other process flows are possible.

At operation 510, the processing logic receives a read request from ahost system 120, or from some other component of the memory sub-system110. In one implementation, the read request identifies data stored in asegment of a memory component. The segment may be any physical orlogical portion of the memory component, such as a data block, forexample.

At operation 520, the processing logic performs a read operation on thesegment of the memory component using a first read voltage level,decodes the data stored at the segment, and determines a write-to-readdelay time for the segment of the memory component in which the dataidentified in the request is stored. In one implementation, read voltageadjustment component uses the lowest read voltage level (e.g., ReadLevel 1) available in the memory sub-system by default to perform theread operation. If the data read using the first read voltage level canbe successfully decoded, read voltage adjustment component 113 can reada time stamp stored with the data on the memory component indicatingwhen the data was written to the segment. If the data read using thelowest read voltage level is not able to be successfully decoded, theprocessing logic may attempt to read the data again using a differentread voltage level (e.g., Read Level 2). The processing logic may repeatthis process until the data is able to be successfully decoded. Uponsuccessfully decoding the data, read voltage adjustment component 113can determine a difference between the write time indicated by the timestamp and the current time (or a time when the read request was receivedat operation 510), where that difference represents the W2R delay. Incertain situations, the W2R delay may be ascertainable without readingthe corresponding segment. For example, if a write timestamp is storedelsewhere, such as in local memory 119, or if controller 115 issueswrite and read operations with known intentional delay times between thewrite and read operations, read voltage adjustment component 113 candetermine the W2R delay before reading the segment. In these cases, readvoltage adjustment component 113 can perform the read operation using adifferent read voltage level (e.g., Read Level 2 or Read Level 3)corresponding to the known W2R delay. In one implementation, whether thefirst read voltage level is Read Level 1, Read Level 2, or Read Level 3,the read voltage level is dynamically adjusted based on a correspondencebetween a first error rate measured at a first boundary of the firstrange and a second error rate measured at a second boundary of the firstrange. In one implementation, the actual value of the read voltage levelcan be adjusted according to the process described above with respect toFIG. 2.

At operation 530, the processing logic identifies a first range of aplurality of write-to-read delay ranges for the memory component,wherein the first range represents a plurality of write-to-read delaytimes, and wherein the write-to-read delay time for the segment fallswithin the first range. At operation 540, the processing logicdetermines an optimal read voltage level to be used to perform a readoperation on segments of the memory component having write-to-read delaytimes that fall within the first range, wherein the optimal read voltagelevel is dynamically adjusted based on a correspondence between a firsterror rate measured at a first boundary of the first range and a seconderror rate measured at a second boundary of the first range. Forexample, for a W2R delay time that falls within W2R range 310, readvoltage adjustment component can determine the corresponding optimalread voltage level (i.e., Read Level 1) from a data structure, mappingtable, register, etc.

At operation 550, the processing logic optionally performs anyadditional read operations on the segment of the memory component usingthe optimal read voltage level determined at operation 540. In oneembodiment, performing the read operation can include applying a signalwith the determined read voltage level to one or more memory cells to beread and determining a state of the memory cells, where this state canbe decoded to provide the data stored therein.

FIG. 6 is a flow diagram of an example method of adjusting a readvoltage level based on accumulated directional RBER statistics formemories with time-varying error rates in accordance with someembodiments of the present disclosure. The method 600 can be performedby processing logic that can include hardware (e.g., processing device,circuitry, dedicated logic, programmable logic, microcode, hardware of adevice, integrated circuit, etc.), software (e.g., instructions run orexecuted on a processing device), or a combination thereof. In someembodiments, the method 600 is performed by the read voltage adjustmentcomponent 113 of FIG. 1. Although shown in a particular sequence ororder, unless otherwise specified, the order of the processes can bemodified. Thus, the illustrated embodiments should be understood only asexamples, and the illustrated processes can be performed in a differentorder, and some processes can be performed in parallel. Additionally,one or more processes can be omitted in various embodiments. Thus, notall processes are required in every embodiment. Other process flows arepossible.

At operation 610, the processing logic identifies a first range (e.g.,W2R Range 310) of a plurality of write-to-read delay ranges for thememory component, wherein the first range represents a plurality ofwrite-to-read delay times and has an associated read voltage level(e.g., Read Level 1) used to perform a read operation on a segment ofthe memory component having a write-to-read delay time that falls withinthe first range, as shown in FIG. 3A. The values of Read Level 1, ReadLevel 2, and Read Level 3 may be set during production of the memorycomponent, but due to the passage of time and other factors associatedwith use of the memory component, may become sub-optimal at some point.Adjusting the read voltage levels based on accumulated directional RBERstatistics can bring those read voltage levels back to a point where theBER is optimized (or at least reduced) for a corresponding range of W2Rdelay times.

Referring again to FIG. 6, at operation 620, the processing logicidentifies a first set 714 of the plurality of write-to-read delay timesat a first end (i.e., boundary) of the first range (i.e., W2R Range310), as illustrated in FIG. 7. FIG. 7 is a graph 700 that illustratesthe accumulated directional RBER statistics for memories withtime-varying error rates in accordance with some embodiments of thepresent disclosure. In one implementation, the first set 714 includes asmall set of the lowest W2R delay times in W2R Range 710. W2R Range 320may similarly have a first set 724, and W2R Range 330 may have a firstset 734. The size of the first set 714 can be a configurable parameterand can include a fixed number of W2R delay times (e.g., the 5 lowestW2R delay times in W2R Range 310) or a percentage of all the W2R delaytimes in W2R Range 310 (e.g., the lowest 1%). In one implementation, theboundary between W2R Range 310 and W2R Range 320 can be set according toa point where curve 312 and curve 322 intersect, and the boundarybetween W2R Range 320 and W2R Range 330 can be set according to a pointwhere curve 322 and curve 332 intersect. Since the error rates canchange over time due to physical changes to the associated memory cells,wear level, temperature, etc., these boundaries can also shift over timein order to optimize the BER. In addition, changing system designtargets can also impact the location of these boundaries.

Referring again to FIG. 6, at operation 630, the processing logicdetermines a first directional error rate for the memory componentcorresponding to the first set 714 of the plurality of write-to-readdelay times and a second directional error rate for the memory componentcorresponding to the first set 714 of the plurality of write-to-readdelay times. In one implementation, the directional error rate pertainsto a number of bits programmed in a first state and erroneously read asa second state. Accordingly, the first error rate can pertain, forexample, to the number of bits written as a logical ‘0’ and erroneouslyread as a logical ‘1’, divided by the total number of logical ‘0’ bitswritten in the measured segment. Similarly, the second error rate canpertain, for example, to the number of bits written as a logical ‘1’ anderroneously read as a logical ‘0’, divided by the total number oflogical ‘1’ bits written in the measured segment. In otherimplementations, the first error rate and the second error rate can bereversed. In another implementation, the processing logical determinesthe directional failed bit counts, rather than the correspondingdirectional error rates.

In one implementation, read voltage adjustment component 113 performs adata integrity scan of the memory component to determine an error ratefor each segment (e.g., a data block). During the scan, read voltageadjustment component 113 identifies one or more reliability statistics,such as the directional error rates. In one embodiment, during the scan,read voltage adjustment component 113 writes and reads a raw code word(i.e., a series of a fixed number of bits) from the data block, with acontrolled W2R delay falling into the first set 714. Read voltageadjustment component 113 can apply the code word to an error correctingcode (ECC) decoder to generate a decoded code word and compare thedecoded code word to the raw code word. Read voltage adjustmentcomponent 113 can count a number of flipped bits between the decodedcode word and the raw code word, further obtaining the directional errorrates of both directions. Read voltage adjustment component 113 canrepeat this process for additional code words until the entire block hasbeen scanned. In another implementation, read voltage adjustmentcomponent 113 can utilize various counters 118 to determine the errorrate, as described in more detail with respect to FIG. 8.

At operation 640, the processing logic determines whether acorrespondence between the first directional error rate and the seconddirectional error rate satisfies a first threshold criterion. In oneimplementation, read voltage adjustment component 113 determines a ratioof the first directional error rate to the second directional error rateand compares that ratio to a target ratio. In one implementation, thetarget ratio may be one, such that it is desirable for the firstdirectional error rate to be as close as possible to the seconddirectional error rate. Accordingly, read voltage adjustment component113 can compare the first directional error rate to the seconddirectional error rate and determine whether the first directional errorrate is within a threshold amount of the second directional error rate.If the ratio is sufficiently close to one (i.e., if the differencebetween the first directional error rate and the second directionalerror rate is within the threshold amount), read voltage adjustmentcomponent 113 can determine that the threshold criterion is satisfied.In other implementations, the target ratio may be some other value setin view of desired reliability and performance requirements of thememory sub-system. For example, in some situations, it may be desirablethat the first directional error rate be lower than the seconddirectional error rate, or vice versa. Accordingly, the target ratio mayhave some value other than one. If the ratio is sufficiently close tothe target ratio (i.e., if the ratio is within the threshold amount ofthe target ratio), read voltage adjustment component 113 can determinethat the threshold criterion is satisfied.

Responsive to the correspondence between the first directional errorrate and the second directional error rate satisfying the firstthreshold criterion, at operation 650, the processing logic maintainsthe read voltage level associated with the first range at a currentlevel. Responsive to the correspondence between the first directionalerror rate and the second directional error rate not satisfying thefirst threshold criterion, at operation 660, the processing logicmodifies the read voltage level associated with the first range. In oneimplementation, read voltage adjustment component 113 can adjust theread voltage level to cause the ratio of the first directional errorrate to the second directional error rate to satisfy the first thresholdcriterion. This can include for example, either increasing or decreasingthe read voltage level by a certain amount, re-measuring the directionalerror rates, and determining whether the ratio is brought closer to thetarget ratio. Read voltage adjustment component 113 can repeat thisiterative process until the threshold criterion is satisfied. Once theappropriate modified read voltage level is determined, read voltageadjustment component 113 can store this read voltage level for use withfuture read operations directed to data having a W2R delay that fallswithin the corresponding range.

FIG. 8 is a flow diagram of an example method of determining adirectional error rate for a set of write-to-read delay times at aboundary of a range of write-to-read delay times in accordance with someembodiments of the present disclosure. The method 800 can be performedby processing logic that can include hardware (e.g., processing device,circuitry, dedicated logic, programmable logic, microcode, hardware of adevice, integrated circuit, etc.), software (e.g., instructions run orexecuted on a processing device), or a combination thereof. In someembodiments, the method 800 is performed by the read voltage adjustmentcomponent 113 of FIG. 1. Although shown in a particular sequence ororder, unless otherwise specified, the order of the processes can bemodified. Thus, the illustrated embodiments should be understood only asexamples, and the illustrated processes can be performed in a differentorder, and some processes can be performed in parallel. Additionally,one or more processes can be omitted in various embodiments. Thus, notall processes are required in every embodiment. Other process flows arepossible.

At operation 810, the processing logic monitors read operationsperformed on segments of the memory component having write-to-read delaytimes that fall within the first set of the plurality of write-to-readdelay times. In one implementation, read voltage adjustment component113 can receive requests to perform read operations from host system120, perform any address mapping operations to identify the physicaladdress in memory to which the read operation is directed, and determinethe corresponding W2R delay time for that address. The W2R delay timecan represent a difference between a first time when the data waswritten to the physical address and a second time when the read requestwas received from the host system 120. Depending on the implementation,the W2R delay time can be calculated based on the difference betweencurrent time and a time stamp (indicating write time) which can bestored either with the data at the physical address on the memorycomponent or in some other data store separate from the memory component(e.g., in local memory 119), or can be otherwise calculated by readvoltage adjustment component 113. In another implementation, actual readoperations are not received from host system 120, but rather readvoltage adjustment component 113 can intentionally issue requests toread data known to have the appropriate W2R delay time. Although theoperations of method 800 are described with respect to errors occurringin a first direction for a first set (e.g., 714) of W2R delay times of afirst range (e.g., W2R Range 310), the same or similar operations may beperformed for a different set (e.g., 724 or 734) or for a differentrange (e.g., W2R Range 320 or 330).

At operation 820, the processing logic increments a first counter ofcounters 118 in response to each failed bit in a first directiondetected in the read operations. For reads that fall within theidentified set 714, read voltage adjustment component 113 reads a rawcode word, applies the code word to an error correcting code (ECC)decoder to generate a decoded code word and compares the decoded codeword to the raw code word. Read voltage adjustment component 113 canincrement the first counter in response to each bit that was flipped ina particular direction in the decoded code word. For example, readvoltage adjustment component 113 can increment the first counter foreach bit written as a logical ‘0’ and erroneously read as a logical ‘1’.In another implementation, read voltage adjustment component 113 caninstead increment the first counter for each bit written as a logical‘1’ and erroneously read as a logical ‘0’. At operation 830, theprocessing logic increments a second counter of counters 118 in responseto each bit of a certain state (i.e., the directional state determinedat operation 820) in the decoded code word. For example, in oneimplementation where the first counter corresponds to the directionerror of data written as a logical ‘0’ and erroneously read as a logical‘1’, at operation 830, the second counter will accumulate in response toeach bit having the state of a logical ‘0’ in the decoded code word.

At operation 840, the processing logic determines whether a value of thefirst counter satisfies a second threshold criterion pertaining to asample size. In order to ensure that the determined error rate isstatistically relevant and not merely an outlier, read voltageadjustment component 113 may continue to collect data until a thresholdnumber of directional failed bit counts have been decoded, with thethreshold number of directional failed bit counts representing asufficient sample size. Once the threshold number has been reached, readvoltage adjustment component 113 can determine that the second thresholdcriterion has been satisfied. Responsive to the value of the firstcounter satisfying the second threshold criterion, at operation 850, theprocessing logic determines the directional error rate from a ratio of avalue of the first counter to the value of the second counter.

In one implementation, the operations of method 800 are performed twicein order to determine both the first and second directional error ratesdescribed with respect to method 600. For example, the processing logicmay determine perform the operations of method 800 once to determine thedirectional error rate corresponding to bits written as a logical ‘0’and erroneously read as a logical ‘1’ and again to determine thedirectional error rate corresponding to bits written as a logical ‘1’and erroneously read as a logical ‘0’. In one implementation, the ratioof the first and second directional error rates is determined atoperation 640 of method 600 responsive to there being a sufficientsample size pertaining to both the first and second directional errorrates, as determined at operation 840. As the number of decoded codewords for directional failed bit accumulation increases, the balancebetween the number of logical ‘0’ and logical ‘1’ bits improves.Accordingly, the first threshold criterion used in operation 640 ofmethod 600 can be determined according to the number of failed bits ineach direction described above with respect to operation 820 of method800.

FIG. 9 is a flow diagram of an example method of performing a readoperation using a dynamically adjusted read voltage level based ondirectional error statistics in accordance with some embodiments of thepresent disclosure. The method 900 can be performed by processing logicthat can include hardware (e.g., processing device, circuitry, dedicatedlogic, programmable logic, microcode, hardware of a device, integratedcircuit, etc.), software (e.g., instructions run or executed on aprocessing device), or a combination thereof. In some embodiments, themethod 900 is performed by the read voltage adjustment component 113 ofFIG. 1. Although shown in a particular sequence or order, unlessotherwise specified, the order of the processes can be modified. Thus,the illustrated embodiments should be understood only as examples, andthe illustrated processes can be performed in a different order, andsome processes can be performed in parallel. Additionally, one or moreprocesses can be omitted in various embodiments. Thus, not all processesare required in every embodiment. Other process flows are possible.

At operation 910, the processing logic receives a read request from ahost system 120, or from some other component of the memory sub-system110. In one implementation, the read request identifies data stored in asegment of a memory component. The segment may be any physical orlogical portion of the memory component, such as a data block, forexample.

At operation 920, the processing logic performs a read operation on thesegment of the memory component using a first read voltage level (e.g.,Read Level 1), decodes the data stored at the segment, and determines awrite-to-read delay time for the segment of the memory component inwhich the data identified in the request is stored. In oneimplementation, read voltage adjustment component uses the lowest readvoltage level (e.g., Read Level 1) available in the memory sub-system bydefault to perform the read operation. If the data read using the firstread voltage level can be successfully decoded, read voltage adjustmentcomponent 113 can read a time stamp stored with the data on the memorycomponent indicating when the data was written to the segment. If thedata read using the lowest read voltage level is not able to besuccessfully decoded, the processing logic may attempt to read the dataagain using a different read voltage level (e.g., Read Level 2). Theprocessing logic may repeat this process until the data is able to besuccessfully decoded. Upon successfully decoding the data, read voltageadjustment component 113 can determine a difference between the writetime indicated by the time stamp and the current time (or a time whenthe read request was received at operation 910), where that differencerepresents the W2R delay. In certain situations, the W2R delay may beascertainable without reading the corresponding segment. For example, ifa write timestamp is stored elsewhere, such as in local memory 119, orif controller 115 issues write and read operations with knownintentional delay times between the write and read operations, readvoltage adjustment component 113 can determine the W2R delay beforereading the segment. In these cases, read voltage adjustment component113 can perform the read operation using a different read voltage level(e.g., Read Level 2 or Read Level 3) corresponding to the known W2Rdelay. In one implementation, whether the first read voltage level isRead Level 1, Read Level 2, or Read Level 3, the read voltage level isdynamically adjusted based on a correspondence between a firstdirectional error rate measured at a first boundary of the first rangeand a second error directional rate measured at the first boundary ofthe first range. In one implementation, the actual value of the readvoltage level can be adjusted according to the process described abovewith respect to FIG. 6.

At operation 930, the processing logic identifies a first range of aplurality of write-to-read delay ranges for the memory component,wherein the first range represents a plurality of write-to-read delaytimes, and wherein the write-to-read delay time for the segment fallswithin the first range. At operation 940, the processing logicdetermines an optimal read voltage level to be used to perform a readoperation on segments of the memory component having write-to-read delaytimes that fall within the first range, wherein the optimal read voltagelevel is dynamically adjusted based on a correspondence between a firstdirectional error rate measured at a first boundary of the first rangeand a second error directional rate measured at the first boundary ofthe first range. For example, for a W2R delay time that falls within W2Rrange 320, read voltage adjustment component can determine thecorresponding optimal read voltage level (i.e., Read Level 2) from adata structure, mapping table, register, etc.

At operation 950, the processing logic optionally performs anyadditional read operations on the segment of the memory component usingthe optimal read voltage level determined at operation 940. In oneembodiment, performing the read operation can include applying a signalwith the determined read voltage level to one or more memory cells to beread and determining a state of the memory cells, where this state canbe decoded to provide the data stored therein.

FIG. 10 illustrates an example machine of a computer system 1000 withinwhich a set of instructions, for causing the machine to perform any oneor more of the methodologies discussed herein, can be executed. In someembodiments, the computer system 1000 can correspond to a host system(e.g., the host system 120 of FIG. 1) that includes, is coupled to, orutilizes a memory sub-system (e.g., the memory sub-system 110 of FIG. 1)or can be used to perform the operations of a controller (e.g., toexecute an operating system to perform operations corresponding to theread voltage adjustment component 113 of FIG. 1). In alternativeembodiments, the machine can be connected (e.g., networked) to othermachines in a LAN, an intranet, an extranet, and/or the Internet. Themachine can operate in the capacity of a server or a client machine inclient-server network environment, as a peer machine in a peer-to-peer(or distributed) network environment, or as a server or a client machinein a cloud computing infrastructure or environment.

The machine can be a personal computer (PC), a tablet PC, a set-top box(STB), a Personal Digital Assistant (PDA), a cellular telephone, a webappliance, a server, a network router, a switch or bridge, or anymachine capable of executing a set of instructions (sequential orotherwise) that specify actions to be taken by that machine. Further,while a single machine is illustrated, the term “machine” shall also betaken to include any collection of machines that individually or jointlyexecute a set (or multiple sets) of instructions to perform any one ormore of the methodologies discussed herein.

The example computer system 1000 includes a processing device 1002, amain memory 1004 (e.g., read-only memory (ROM), flash memory, dynamicrandom access memory (DRAM) such as synchronous DRAM (SDRAM) or RambusDRAM (RDRAM), etc.), a static memory 1006 (e.g., flash memory, staticrandom access memory (SRAM), etc.), and a data storage system 1018,which communicate with each other via a bus 1030.

Processing device 1002 represents one or more general-purpose processingdevices such as a microprocessor, a central processing unit, or thelike. More particularly, the processing device can be a complexinstruction set computing (CISC) microprocessor, reduced instruction setcomputing (RISC) microprocessor, very long instruction word (VLIW)microprocessor, or a processor implementing other instruction sets, orprocessors implementing a combination of instruction sets. Processingdevice 1002 can also be one or more special-purpose processing devicessuch as an application specific integrated circuit (ASIC), a fieldprogrammable gate array (FPGA), a digital signal processor (DSP),network processor, or the like. The processing device 1002 is configuredto execute instructions 1026 for performing the operations and stepsdiscussed herein. The computer system 1000 can further include a networkinterface device 1008 to communicate over the network 1020.

The data storage system 1018 can include a machine-readable storagemedium 1024 (also known as a computer-readable medium) on which isstored one or more sets of instructions 1026 or software embodying anyone or more of the methodologies or functions described herein. Theinstructions 1026 can also reside, completely or at least partially,within the main memory 1004 and/or within the processing device 1002during execution thereof by the computer system 1000, the main memory1004 and the processing device 1002 also constituting machine-readablestorage media. The machine-readable storage medium 1024, data storagesystem 1018, and/or main memory 1004 can correspond to the memorysub-system 110 of FIG. 1.

In one embodiment, the instructions 1026 include instructions toimplement functionality corresponding to the read voltage adjustmentcomponent 113 of FIG. 1. While the machine-readable storage medium 1024is shown in an example embodiment to be a single medium, the term“machine-readable storage medium” should be taken to include a singlemedium or multiple media that store the one or more sets ofinstructions. The term “machine-readable storage medium” shall also betaken to include any medium that is capable of storing or encoding a setof instructions for execution by the machine and that cause the machineto perform any one or more of the methodologies of the presentdisclosure. The term “machine-readable storage medium” shall accordinglybe taken to include, but not be limited to, solid-state memories,optical media, and magnetic media.

Some portions of the preceding detailed descriptions have been presentedin terms of algorithms and symbolic representations of operations ondata bits within a computer memory. These algorithmic descriptions andrepresentations are the ways used by those skilled in the dataprocessing arts to most effectively convey the substance of their workto others skilled in the art. An algorithm is here, and generally,conceived to be a self-consistent sequence of operations leading to adesired result. The operations are those requiring physicalmanipulations of physical quantities. Usually, though not necessarily,these quantities take the form of electrical or magnetic signals capableof being stored, combined, compared, and otherwise manipulated. It hasproven convenient at times, principally for reasons of common usage, torefer to these signals as bits, values, elements, symbols, characters,terms, numbers, or the like.

It should be borne in mind, however, that all of these and similar termsare to be associated with the appropriate physical quantities and aremerely convenient labels applied to these quantities. The presentdisclosure can refer to the action and processes of a computer system,or similar electronic computing device, that manipulates and transformsdata represented as physical (electronic) quantities within the computersystem's registers and memories into other data similarly represented asphysical quantities within the computer system memories or registers orother such information storage systems.

The present disclosure also relates to an apparatus for performing theoperations herein. This apparatus can be specially constructed for theintended purposes, or it can include a general purpose computerselectively activated or reconfigured by a computer program stored inthe computer. Such a computer program can be stored in a computerreadable storage medium, such as, but not limited to, any type of diskincluding floppy disks, optical disks, CD-ROMs, and magnetic-opticaldisks, read-only memories (ROMs), random access memories (RAMs), EPROMs,EEPROMs, magnetic or optical cards, or any type of media suitable forstoring electronic instructions, each coupled to a computer system bus.

The algorithms and displays presented herein are not inherently relatedto any particular computer or other apparatus. Various general purposesystems can be used with programs in accordance with the teachingsherein, or it can prove convenient to construct a more specializedapparatus to perform the method. The structure for a variety of thesesystems will appear as set forth in the description below. In addition,the present disclosure is not described with reference to any particularprogramming language. It will be appreciated that a variety ofprogramming languages can be used to implement the teachings of thedisclosure as described herein.

The present disclosure can be provided as a computer program product, orsoftware, that can include a machine-readable medium having storedthereon instructions, which can be used to program a computer system (orother electronic devices) to perform a process according to the presentdisclosure. A machine-readable medium includes any mechanism for storinginformation in a form readable by a machine (e.g., a computer). In someembodiments, a machine-readable (e.g., computer-readable) mediumincludes a machine (e.g., a computer) readable storage medium such as aread only memory (“ROM”), random access memory (“RAM”), magnetic diskstorage media, optical storage media, flash memory components, etc.

In the foregoing specification, embodiments of the disclosure have beendescribed with reference to specific example embodiments thereof. Itwill be evident that various modifications can be made thereto withoutdeparting from the broader spirit and scope of embodiments of thedisclosure as set forth in the following claims. The specification anddrawings are, accordingly, to be regarded in an illustrative senserather than a restrictive sense.

What is claimed is:
 1. A system comprising: a memory component; and aprocessing device, operatively coupled with the memory component, to:identify a range of a plurality of write-to-read delay ranges for thememory component, wherein the range represents a plurality ofwrite-to-read delay times and has an associated read voltage level usedto perform a read operation on a segment of the memory component havinga write-to-read delay time that falls within the range; identify a firstset of the plurality of write-to-read delay times at a first end of therange and a second set of the plurality of write-to-read delay times ata second end of the range, wherein the first set comprises differentwrite-to-read delay times than the second set; determine a first errorrate for the memory component corresponding to the first set of theplurality of write-to-read delay times and a second error rate for thememory component corresponding to the second set of the plurality ofwrite-to-read delay times; determine whether a correspondence betweenthe first error rate and the second error rate satisfies a firstthreshold criterion; and responsive to the correspondence between thefirst error rate and the second error rate not satisfying the firstthreshold criterion, modify the read voltage level associated with therange.
 2. The system of claim 1, wherein to determine the first errorrate, the processing device is to: monitor read operations performed onsegments of the memory component having write-to-read delay times thatfall within the first set of the plurality of write-to-read delay times;increment a first counter in response to each failed bit detected in theread operations; increment a second counter in response to each bit ineach code word that is decoded in the read operations; determine that avalue of the first counter satisfies a second threshold criterionpertaining to a sample size; and determine a ratio of a value of thefirst counter to a value of the second counter.
 3. The system of claim1, wherein to determine whether the correspondence between the firsterror rate and the second error rate satisfies the first thresholdcriterion, the processing device is to determine whether the first errorrate is within a threshold amount of the second error rate.
 4. Thesystem of claim 1, wherein to determine whether the correspondencebetween the first error rate and the second error rate satisfies thefirst threshold criterion, the processing device is to determine whethera ratio of the first error rate to the second error rate is within athreshold amount of a target ratio.
 5. The system of claim 4, whereinthe target ratio is based on desired reliability and performancerequirements of the system.
 6. The system of claim 1, wherein to modifythe read voltage level associated with the range, the processing deviceis to adjust the read voltage level to cause the correspondence betweenthe first error rate and the second error rate to satisfy the firstthreshold criterion.
 7. The system of claim 1, wherein the processingdevice is further to: responsive to the correspondence between the firsterror rate and the second error rate satisfying the first thresholdcriterion, maintain the read voltage level associated with the range ata current level.
 8. A method of operation of a memory sub-systemcomprising: receiving a read request from a host system, the readrequest identifying data stored in a segment of a memory component;performing a read operation on the segment of the memory component usinga first read voltage level; determining, based on the read operation, awrite-to-read delay time for the segment of the memory component inwhich the data identified in the request is stored; identifying a rangeof a plurality of write-to-read delay ranges for the memory component,wherein the range represents a plurality of write-to-read delay times,and wherein the write-to-read delay time for the segment falls withinthe range; and determining a second read voltage level used to performread operations on the segment of the memory component, wherein thesecond read voltage level is dynamically adjusted based on acorrespondence between a first error rate measured at a first boundaryof the range and a second error rate measured at a second boundary ofthe range, wherein the first boundary represents a differentwrite-to-read delay time than the second boundary.
 9. The method ofclaim 8, wherein the write-to-read delay time represents a differencebetween a first time when the data was written to the segment and asecond time when the read request identifying the data was received fromthe host system.
 10. The method of claim 8, wherein determining thesecond read voltage level comprises: identifying a first set of theplurality of write-to-read delay times at the first boundary of therange and a second set of the plurality of write-to-read delay times atthe second boundary of the range; determining the first error rate forthe memory component corresponding to the first set of the plurality ofwrite-to-read delay times and the second error rate for the memorycomponent corresponding to the second set of the plurality ofwrite-to-read delay times; and determining the correspondence betweenthe first error rate and the second error rate.
 11. The method of claim10, further comprising: dynamically adjusting the second read voltagelevel responsive to the correspondence between the first error rate andthe second error rate not satisfying the first threshold criterion. 12.The method of claim 11, wherein the correspondence between the firsterror rate and the second error rate satisfies the first thresholdcriterion when the first error rate is within a threshold amount of thesecond error rate.
 13. The method of claim 11, wherein thecorrespondence between the first error rate and the second error ratesatisfies the first threshold criterion when a ratio of the first errorrate to the second error rate is within a threshold amount of a targetratio, and wherein the target ratio is based on desired reliability andperformance requirements of the memory sub-system.
 14. A non-transitorycomputer-readable storage medium comprising instructions that, whenexecuted by a processing device, cause the processing device to:identify a range of a plurality of write-to-read delay ranges for amemory component in a memory sub-system, wherein the range represents aplurality of write-to-read delay times and has an associated readvoltage level used to perform a read operation on a segment of thememory component having a write-to-read delay time that falls within therange; identify a first set of the plurality of write-to-read delaytimes at a first end of the range and a second set of the plurality ofwrite-to-read delay times at a second end of the range, wherein thefirst set comprises different write-to-read delay times than the secondset; determine a first error rate for the memory component correspondingto the first set of the plurality of write-to-read delay times and asecond error rate for the memory component corresponding to the secondset of the plurality of write-to-read delay times; determine whether acorrespondence between the first error rate and the second error ratesatisfies a first threshold criterion; and responsive to thecorrespondence between the first error rate and the second error ratenot satisfying the first threshold criterion, modify the read voltagelevel associated with the range.
 15. The non-transitorycomputer-readable storage medium of claim 14, wherein to determine thefirst error rate, the instructions further cause the processing deviceto: monitor read operations performed on segments of the memorycomponent having write-to-read delay times that fall within the firstset of the plurality of write-to-read delay times; increment a firstcounter in response to each failed bit detected in the read operations;increment a second counter in response to each bit in each code wordthat is decoded in the read operations; determine that a value of thefirst counter satisfies a second threshold criterion pertaining to asample size; and determine a ratio of a value of the first counter to avalue of the second counter.
 16. The non-transitory computer-readablestorage medium of claim 14, wherein to determine whether thecorrespondence between the first error rate and the second error ratesatisfies the first threshold criterion, the instructions further causethe processing device to determine whether the first error rate iswithin a threshold amount of the second error rate.
 17. Thenon-transitory computer-readable storage medium of claim 14, wherein todetermine whether the correspondence between the first error rate andthe second error rate satisfies the first threshold criterion, theinstructions further cause the processing device to determine whether aratio of the first error rate to the second error rate is within athreshold amount of a target ratio.
 18. The non-transitorycomputer-readable storage medium of claim 17, wherein the target ratiois based on desired reliability and performance requirements of thememory sub-system.
 19. The non-transitory computer-readable storagemedium of claim 14, wherein to modify the read voltage level associatedwith the range, the instructions further cause the processing device toadjust the read voltage level to cause the correspondence between thefirst error rate and the second error rate to satisfy the firstthreshold criterion.
 20. The non-transitory computer-readable storagemedium of claim 14, wherein the instructions further cause theprocessing device to: responsive to the correspondence between the firsterror rate and the second error rate satisfying the first thresholdcriterion, maintain the read voltage level associated with the range ata current level.